Part Number Hot Search : 
VN771P AD7525UD 20012 HE700 5261B TECHNO ML4663 40E0X
Product Description
Full Text Search
 

To Download 2SB1119 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 2SB1119/2SD1619
Elektronische Bauelemente
RoHS Compliant Product
D D1 A
PNP Silicon Medium Power Transistor
SOT-89
E1
FEATURES Power dissipation P CM : 500mW Tamb=25 1.BASE Collector current 2.COLLECTOR A ICM : -1 3.EMITTER Collector-base voltage V VB(BR)CBO : -25 Operating and storage junction temperature range TJ Tstg: -55 to +150
b1
b
L
E
e e1
C
Dimensions In Millimeters Symbol A b b1 c D D1 E E1 e e1 L 2.900 0.900 Min 1.400 0.320 0.360 0.350 4.400 1.400 2.300 3.940 1.500TYP 3.100 1.100 Max 1.600 0.520 0.560 0.440 4.600 1.800 2.600 4.250 Min
Dimensions In Inches Max 0.063 0.020 0.022 0.017 0.181 0.071 0.102 0.167 0.060TYP 0.114 0.035 0.122 0.043
0.055 0.013 0.014 0.014 0.173 0.055 0.091 0.155
ELECTRICAL CHARACTERISTICS
Tamb=25
unlessotherwise
specified CLASSIFICATION OF
hFE(1)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current
Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE
1
Test
conditions IE=0
MIN -25 -25 -5
TYP
MAX
UNIT V V V
Ic=-10 A
IC= -1 mA , IB=0 IE= -10 A IC=0 IE=0
VCB= -20 V ,
-0.1 -0.1 -0.1 100 40 -0.7 -1.2 180
25
A A A
VCE= -20 V , IB=0 VEB=-4V , IC=0
VCE= -2V, IC= -50mA VCE=-2V, IC= -1A IC=-0.5A, IC=-0.5A, VCE= -10V, IB= -50mA IB= -50mA IC=-50mA
560
DC current gain hFE Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency
2
VCE(sat) VBE(sat)
fT
V V MHz
pF
Collector output capacitance
Marking 2SB1119 : 2SD1619 : BB DB
Cob
VCB=-10V, f = 1MH
CLASSIFICATION OF hFE(1)
Rank Range
http://www.SeCoSGmbH.com
R 100-200
S 140-280
T 200-400
U 280-560
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 3
2SB1119/2SD1619
Elektronische Bauelemente
PNP Silicon Medium Power Transistor
Electrical characteristic curves
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 3
2SB1119/2SD1619
Elektronische Bauelemente
PNP Silicon Medium Power Transistor
Electrical characteristic curves
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 3 of 3


▲Up To Search▲   

 
Price & Availability of 2SB1119

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X